march 2007 rev 1 1/7 stth60r04 ultrafast recovery diode main product characteristics features and benefits very low switching losses high frequency and/or high pulsed current operation high junction temperature description the stth60r04 series uses st's new 400 v planar pt doping technology. the stth60r04 is specially suited for switching mode base drive and transistor circuits. available in a through-the-hole package, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. order codes i f(av) 60 a v rrm 400 v t j 175 c v f (typ) 0.95 v t rr (typ) 31 ns part number marking STTH60R04W STTH60R04W k a k a do-247 STTH60R04W table 1. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v v rsm non repetitive peak reverse voltage 400 v i f(rms) rms forward current 100 a i f(av) average forward current, = 0.5 t c = 110 c 60 a i frm repetitive peak forward current t p = 5 s f = 1 khz square 375 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 650 a t stg storage temperature range -65 to +175 c t j operating junction temperature range -40 to +175 c www.st.com
characteristics stth60r04 2/7 1 characteristics to evaluate the conduction losses use the following equation: p = 0.9 x i f(av) + 0.005 x i f 2 (rms) table 2. thermal parameters symbol parameter value unit r th(j-c) junction to case 0.7 c/w table 3. static electrical characteristics symbol parameter test conditions min typ max unit i r (1) 1. pulse test: t p = 5 ms, < 2 % reverse leakage current t j = 25 c v r = v rrm 60 a t j = 125 c 60 600 v f (2) 2. pulse test: t p = 380 s, < 2 % forward voltage drop t j = 25 c i f = 60 a 1.5 v t j = 100 c 1.05 1.3 t j = 150 c 0.95 1.2 table 4. dynamic characteristics symbol parameter test conditions min typ max unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 80 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 40 55 i f = 1 a, di f /dt = -200 a/s, v r = 30 v, t j = 25 c 31 45 i rm reverse recovery current i f = 60 a, di f /dt = -200 a/s, v r = 320 v, t j = 125 c 11 16 a s softness factor i f = 60 a, di f /dt = -200 a/s, v r = 320 v, t j = 125 c 0.4 t fr forward recovery time i f = 60 a, di f /dt = 100 a/s v fr = 1.1 x v fmax , t j = 25 c 800 ns v fp forward recovery voltage i f = 60 a di f /dt = 100 a/s t j = 25 c 3.2 v
stth60r04 characteristics 3/7 figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current p(w) 0 20 40 60 80 100 0 1020304050607080 =0.05 =0.1 =0.2 =0.5 =1 t =tp/t tp i f(av) (a) i fm (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t j =150c (maximum values) t j =150c (maximum values) t j =150c (typical values) t j =150c (typical values) t j =25c (maximum values) t j =25c (maximum values) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) zth (j-c) /rth (j-c) 0.1 1.0 1.e-03 1.e-02 1.e-01 1.e+00 single pulse do-247 tp(s) i rm (a) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 10 100 1000 i f = 60a v r =320v t j =125 c t j =25 c di f /dt(a/s) figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t rr (ns) 0 20 40 60 80 100 120 140 160 10 100 1000 i f = 60a v r =320v t j =125 c t j =25 c di f /dt(a/s) q rr (nc) 0 100 200 300 400 500 600 700 800 10 100 1000 i f = 60 a v r =320v t j =125 c t j =25 c di f /dt(a/s)
characteristics stth60r04 4/7 figure 7. relative variations of dynamic parameters versus junction temperature figure 8. transient peak forward voltage versus di f /dt (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 i rm q rr i f =60a v r =320v t j (c) q [t ]/q [t = 125 c] and i rr j rr j rm j rm j [t ]/i [t = 125 c] v fp (v) 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 i f = 60a t j =125c di f /dt(a/s) figure 9. forward recovery time versus di f /dt (typical values) figure 10. junction capacitance versus reverse voltage applied (typical values) t fr (ns) 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 i f =60a v fr =1.1 x v f max. t j =125c di f /dt(a/s) c(pf) 100 1000 1 10 100 1000 f=1mhz v osc =30mv rms t j =25c v r (v)
stth60r04 package information 5/7 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.8 nm maximum torque value: 1.0 nm in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 5. do-247 dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 v h l5 l l3 v2 g f f3 l1 f2 l2 l4 v dia a d me
ordering information stth60r04 6/7 3 ordering information 4 revision history part number marking package weight base qty delivery mode STTH60R04W STTH60R04W do-247 4.40 g 30 tube date revision description of changes 31-mar-2007 1 first issue
stth60r04 7/7 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
